POLYSILICON RECRYSTALLIZATION BY CO2-LASER HEATING OF SIO2

被引：5

作者：

WEINBERG, ZA

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 05期

关键词：

D O I：

10.1063/1.92759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：421 / 422

页数：2

共 16 条

[1] THEORETICAL CONSIDERATIONS REGARDING PULSED CO2-LASER ANNEALING OF SILICON [J].

BHATTACHARYYA, A ;

STREETMAN, BG .

SOLID STATE COMMUNICATIONS, 1980, 36 (08) :671-675

[2] LASER-INDUCED CRYSTALLIZATION OF SILICON ISLANDS ON AMORPHOUS SUBSTRATES - MULTILAYER STRUCTURES [J].

BIEGELSEN, DK ;

JOHNSON, NM ;

BARTELINK, DJ ;

MOYER, MD .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :150-152

[3] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J].

FAN, JCC ;

GEIS, MW ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :365-367

[4] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J].

GAT, A ;

GERZBERG, L ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

HONG, JD .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :775-778

[5] SILICON GRAPHOEPITAXY USING A STRIP-HEATER OVEN [J].

GEIS, MW ;

ANTONIADIS, DA ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :454-456

[6] CW LASER RECRYSTALLIZATION OF (100) SI ON AMORPHOUS SUBSTRATES [J].

GIBBONS, JF ;

LEE, KF ;

MAGEE, TJ ;

PENG, J ;

ORMOND, R .

APPLIED PHYSICS LETTERS, 1979, 34 (12) :831-833

[7] MOSFETS IN LASER-RECRYSTALLIZED POLYSILICON ON QUARTZ [J].

KAMINS, TI ;

PIANETTA, PA .

ELECTRON DEVICE LETTERS, 1980, 1 (10) :214-216

[8] LASER FABRICATION OF LARGE-AREA ARRAYS - THIN-FILM SILICON ISOLATED DEVICES ON FUSED SILICA SUBSTRATES [J].

LAFF, RA ;

HUTCHINS, GL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (11) :743-743

[9] CHARACTERISTICS OF MOSFETS FABRICATED IN LASER-RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATE [J].

LAM, HW ;

TASCH, AF ;

HOLLOWAY, TC .

ELECTRON DEVICE LETTERS, 1980, 1 (10) :206-208

[10] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J].

LEE, KF ;

GIBBONS, JF ;

SARASWAT, KC .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :173-175

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