A PSEUDOMORPHIC ALGAAS/N+-INGAAS METAL INSULATOR-DOPED CHANNEL FET FOR BROAD-BAND, LARGE-SIGNAL APPLICATIONS

被引：33

作者：

GREENBERG, DR ^{[1
]}

DELALAMO, JA ^{[1
]}

HARBISON, JP ^{[1
]}

FLOREZ, LT ^{[1
]}

机构：

[1] BELL COMMUN RES INC,RED BANK,NJ 07701

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 08期

关键词：

D O I：

10.1109/55.119157

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate MBE-grown L(g) = 1.7-mu-m pseudomorphic Al0.38Ga0.62As/n+-In0.15Ga0.85As/GaAs metal-insulator-doped channel FET's (MIDGET's) displaying extremely broad plateaus in both f(T) and f(max) versus V(GS), with f(T) sustaining 90% of its peak over a gate swing of 2.6 V. Drain current is highly linear with V(GS) over this swing, reaching 514 mA/mm. We find no frequency dispersion in g(m) up to 3 GHz, indicating the absence of electrically active traps in the undoped AlGaAs pseudoinsulator layer. These properties combine to make the pseudomorphic MIDFET highly suited to linear, large-signal, broad-band applications.

引用

页码：436 / 438

页数：3

共 14 条

[1] THERMAL-CONVERSION AND HYDROGENATION EFFECTS IN ALGAAS [J].