EPITAXIAL VVMOS POWER TRANSISTORS

被引：7

作者：

LANE, WA

SALAMA, CAT

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 02期

关键词：

D O I：

10.1109/T-ED.1980.19867

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：349 / 355

页数：7

共 21 条

[1] THEORY AND BREAKDOWN VOLTAGE FOR PLANAR DEVICES WITH A SINGLE FIELD LIMITING RING [J].

ADLER, MS ;

TEMPLE, VAK ;

FERRO, AP ;

RUSTAY, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) :107-113

[2]

BALIGA BJ, 1976, SOLID STATE ELECTRON, V19, P739, DOI 10.1016/0038-1101(76)90152-0

[3]

COBBOLD RSC, 1970, THEORY APPLICATIONS, P272

[4] EFFECTS OF DIFFUSED IMPURITY PROFILE ON DC CHARACTERISTICS OF VMOS AND DMOS DEVICES [J].

DAVANZO, DC ;

COMBS, SR ;

DUTTON, RW .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (04) :356-362

[5] THEORETICAL CONSIDERATIONS ON THE EFFECTS OF BULK CHARGE ON VMOST CHARACTERISTICS [J].

GREENEICH, EW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (05) :807-810

[6]

GROVE AS, 1967, PHYSICS TECHNOLOGY S, P199

[7]

HU C, 1979, IEEE T ELECTRON DEV, V26, P243

[8] EPI CHANNEL SWITCH [J].

JOHNSON, BT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (08) :525-&

[9] OPTIMIZATION OF NONPLANAR POWER MOS-TRANSISTORS [J].

LISIAK, KP ;

BERGER, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) :1229-1234

[10] DOUBLE ION-IMPLANTED V-MOS TECHNOLOGY [J].

OUYANG, P .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (01) :3-10

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