OPTICAL REFLECTANCE MEASUREMENTS OF TRANSIENTS DURING MOLECULAR-BEAM EPITAXIAL-GROWTH ON (001) GAAS

被引：17

作者：

HARBISON, JP

ASPNES, DE

STUDNA, AA

FLOREZ, LT

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584362

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：740 / 742

页数：3

共 13 条

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[9] ROLE OF SURFACE KINETICS AND INTERRUPTED GROWTH DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF NORMAL AND INVERTED GAAS/ALGAAS(100) INTERFACES - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY DYNAMICS STUDY [J].

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