STRAIN EFFECTS IN EPITAXIAL MONOLAYER STRUCTURES - SI-GE AND SI-SIO2 SYSTEMS

被引：5

作者：

BEVK, J ^{[1
]}

FELDMAN, LC ^{[1
]}

PEARSALL, TP ^{[1
]}

SCHWARTZ, GP ^{[1
]}

OURMAZD, A ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1990年 / 6卷 / 2-3期

关键词：

D O I：

10.1016/0921-5107(90)90092-P

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Strain due to lattice mismatch at semiconductor interfaces plays an important role in determining both the thin film growth mechanisms and electronic structure and physical properties of materials. The SiGe system with its 4% lattice mismatch offers an opportunity to study various strain-related interface phenomena, and to exploit strain effects in novel optoelectronic devices. A similar interplay of science and technology exists in the SiSiO2 system, where modern experimental techniques continue to provide new insights into the atomic structure of this technologically important interface. © 1990.

引用

页码：159 / 169

页数：11

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