SHALLOW AND PARALLEL SILICIDE CONTACTS

被引：46

作者：

TU, KN

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571147

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：766 / 777

页数：12

共 40 条

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[9] EFFECT OF SUBSTRATE-TEMPERATURE ON THE FORMATION OF SHALLOW SILICIDE CONTACTS ON SI USING PD-W AND PT-W ALLOYS [J].

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