X-RAY PHOTOELECTRON-SPECTROSCOPY INVESTIGATION OF THE MIXED ANION GASB/INAS HETEROINTERFACE

X-ray photoelectron spectroscopy has been used to measure levels of anion cross-incorporation and to study interface formation for the mixed anion GaSb/InAs heterojunction. Anion cross-incorporation was measured m 20 angstrom thick GaSb layers grown on InAs, and 20 angstrom thick InAs layers grown on GaSb for cracked and uncracked sources. It was found that significantly less anion cross-incorporation occurs m structures grown with cracked sources. Interface formation was investigated by studying Sb soaks of InAs surfaces and As soaks of GaSb surfaces as a function of cracker power and soak time. Exchange of the group V surface atoms was found to be an increasing function of both cracker power and soak time. We find that further optimization of current growth parameters may be possible by modifying the soak time used at interfaces.