DETERMINATION OF THE GAIN NONLINEARITY TIME CONSTANT IN 1.3 MU-M SEMICONDUCTOR-LASERS

被引：14

作者：

EOM, J ^{[1
]}

SU, CB ^{[1
]}

RIDEOUT, W ^{[1
]}

LAUER, RB ^{[1
]}

LACOURSE, JS ^{[1
]}

机构：

[1] GTE LABS INC,WALTHAM,MA 02254

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 03期

关键词：

D O I：

10.1063/1.104699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By comparison of the measured K factors (ratio of the damping factor to the square of the resonance frequency) of distributed feedback and Fabry-Perot lasers, it is found that the relaxation time associated with nonlinear gain for 1.3-mu-m InGaAsP lasers is about 0.1 ps. This short time constant is consistent with spectral hole burning being the dominant process responsible for the nonlinear gain.

引用

页码：234 / 236

页数：3

共 13 条

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