PHOTOIONIZATION CROSS-SECTION STUDIES OF THE PLATINUM-DONOR CENTER IN SILICON

被引:6
作者
MAYO, S
LOWNEY, JR
机构
关键词
D O I
10.1063/1.337892
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2626 / 2632
页数:7
相关论文
共 27 条
[1]   WATSON-SPHERE-TERMINATED MODEL APPLIED TO THE AUO AND PT- SUBSTITUTIONAL IMPURITIES IN SILICON [J].
ALVES, JLA ;
LEITE, JR .
PHYSICAL REVIEW B, 1984, 30 (12) :7284-7286
[2]   PHOTOIONIZATION CROSS-SECTIONS IN PLATINUM-DOPED SILICON [J].
BRAUN, S ;
GRIMMEISS, HG ;
SPANN, K .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3883-3887
[3]   OPTICAL-PROPERTIES OF GOLD ACCEPTOR AND DONOR LEVELS IN SILICON [J].
BRAUN, S ;
GRIMMEISS, HG .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2658-2665
[4]   MEASUREMENT OF MINORITY-CARRIER CAPTURE CROSS-SECTIONS AND APPLICATION TO GOLD AND PLATINUM IN SILICON [J].
BROTHERTON, SD ;
BRADLEY, P .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1543-1553
[5]   ELECTRON-CAPTURE CROSS-SECTION AND ENERGY-LEVEL OF GOLD ACCEPTOR CENTER IN SILICON [J].
BROTHERTON, SD ;
BICKNELL, J .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) :667-671
[6]   ELECTRON AND HOLE CAPTURE AT AU AND PT CENTERS IN SILICON [J].
BROTHERTON, SD ;
LOWTHER, JE .
PHYSICAL REVIEW LETTERS, 1980, 44 (09) :606-609
[7]   ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON [J].
BROTHERTON, SD ;
BRADLEY, P ;
BICKNELL, J .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3396-3403
[8]  
BUEHLER MG, 1974, NBS4006 SPEC PUBL
[9]   DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS [J].
CHANTRE, A ;
VINCENT, G ;
DUBOIS .
PHYSICAL REVIEW B, 1981, 23 (10) :5335-5359
[10]   CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J].
DRESSELHAUS, G ;
KIP, AF ;
KITTEL, C .
PHYSICAL REVIEW, 1955, 98 (02) :368-384