INTERFACE STATES IN N-ZNSE/N-GAAS HETEROSTRUCTURE CHARACTERIZED BY DEEP LEVEL TRANSIENT SPECTROSCOPY TECHNIQUE

被引:7
作者
MATSUMOTO, T
ITO, Y
ISHIDA, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 04期
关键词
D O I
10.1143/JJAP.28.L541
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:L541 / L543
页数:3
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