BILAYER SNO2-IN/SNO2 THIN-FILMS AS TRANSPARENT ELECTRODES OF AMORPHOUS-SILICON SOLAR-CELLS

Bilayer films of SnO2:In/SnO2 were deposited, and the deposition parameters of these films were optimized to obtain good electrical and optical properties for application as the transparent electrode of amorphous silicon solar cells. A depth-profiling technique using secondary ion mass spectrometry was used to study the diffusion of elements. The SnO2 layer thickness was varied to check the diffusion of indium into the p and i layers, which affects the electrical properties of the amorphous layers of the solar cell. Optimization of SnO2 layer thickness allows us to raise the p-layer deposition temperature to 180-degrees-C without enhancing indium diffusion into the p-i interface.