BINDING TO DEEP IMPURITIES IN SEMICONDUCTORS

被引：19

作者：

RODRIGUEZ, CO

BRAND, S

JAROS, M

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 13期

关键词：

D O I：

10.1088/0022-3719/13/13/003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L333 / L337

页数：5

共 13 条

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[6]

BRAND S, UNPUBLISHED

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BRAND, S .

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[8] CALCULATIONS OF IMPURITY STATES IN SEMICONDUCTORS-II GAP-O [J].

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[9] SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION OF ELECTRONIC STATES ASSOCIATED WITH A RECONSTRUCTED SILICON VACANCY [J].

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[10] 2-ELECTRON IMPURITY STATES IN GAP - O [J].

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