MICROANALYSIS OF SILICON-ON-INSULATOR MATERIALS

被引：4

作者：

EARWAKER, LG

BRIGGS, MC

FARR, JPG

KEEN, JM

机构：

[1] UNIV BIRMINGHAM, DEPT MET & MAT, BIRMINGHAM B15 2TT, W MIDLANDS, ENGLAND

[2] ROYAL SIGNALS & RADAR ESTAB, MALVERN WR14 3PS, WORCS, ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 54卷 / 1-3期

关键词：

D O I：

10.1016/0168-583X(91)95522-F

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Silicon-on-insulator (SOI) material produced by the porous silicon route has been analysed using nuclear techniques in the ion microprobe at the University of Birmingham, School of Physics and Space Research. The analysis system, based on CAMAC and a 1050 Falcon LSI 11/12 microprocessor, is described and measurements are reported of early attempts to metallise masked porous silicon structures. It is found that the porous silicon has been converted to tungsten between islands and a thin skin of tungsten has been produced on the surface of the islands. Oxidation of the tungsten surface has also been observed and evidence found for some penetration of tungsten through pinholes in the protective nitride layer over the islands.

引用

页码：258 / 263

页数：6

共 12 条

[1] SOI TECHNOLOGY USING BURIED LAYERS OF OXIDIZED POROUS SI [J].

BARLA, K ;

BOMCHIL, G ;

HERINO, R ;

MONROY, A .

IEEE CIRCUITS AND DEVICES MAGAZINE, 1987, 3 (06) :11-15

[2] CHARACTERISTICS OF SOI CMOS CIRCUITS MADE IN N/N+/N OXIDIZED POROUS SILICON STRUCTURES [J].

BARLA, K ;

BOMCHIL, G ;

HERINO, R ;

MONROY, A ;

GRIS, Y .

ELECTRONICS LETTERS, 1986, 22 (24) :1291-1293

[3]

Chu W.-K., 1978, BACKSCATTERING SPECT

[4] PROTON MICROBEAMS, THEIR PRODUCTION AND USE [J].

COOKSON, JA ;

FERGUSON, AT ;

PILLING, FD .

JOURNAL OF RADIOANALYTICAL CHEMISTRY, 1972, 12 (01) :39-52

[5] ANALYSIS OF POROUS SILICON [J].

EARWAKER, LG ;

FARR, JPG ;

GRZESZCZYK, PE ;

STURLAND, I ;

KEEN, JM .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 9 (03) :317-320

[6]

FERREIRA LFR, 1980, THESIS U MANCHESTER

[7] SIMOX SOI FOR INTEGRATED-CIRCUIT FABRICATION [J].

HON, WL .

IEEE CIRCUITS AND DEVICES MAGAZINE, 1987, 3 (04) :6-11

[8] ELECTRICAL AND RADIATION CHARACTERIZATION OF 3 SOI MATERIAL TECHNOLOGIES [J].

KRULL, WA ;

BULLER, JF ;

ROUSE, GV ;

CHERNE, RD .

IEEE CIRCUITS AND DEVICES MAGAZINE, 1987, 3 (04) :20-26

[9] HIGH-PERFORMANCE THIN-FILM SILICON-ON-INSULATOR CMOS TRANSISTORS IN POROUS ANODIZED SILICON [J].

THOMAS, NJ ;

DAVIS, JR ;

KEEN, JM ;

CASTLEDINE, JG ;

BRUMHEAD, D ;

GOULDING, M ;

ALDERMAN, J ;

FARR, JPG ;

EARWAKER, LG ;

LECUYER, J ;

STIRLAND, IM ;

COLE, JM .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (03) :129-131

[10] TUNGSTEN DEPOSITION ON POROUS SILICON FOR FORMATION OF BURIED CONDUCTORS IN SINGLE-CRYSTAL SILICON [J].

TSAO, SS ;

BLEWER, RS ;

TSAO, JY .

APPLIED PHYSICS LETTERS, 1986, 49 (07) :403-405

← 1 2 →