INTEGRATED DE-E DETECTOR SYSTEM MADE BY ION-IMPLANTATION

被引：4

作者：

KOSTKA, A

KALBITZER, S

机构：

[1] AEG TELEFUNKEN, HEILBRONN, WEST GERMANY

[2] MAX PLANCK INST KERN PHYS, HEIDELBERG, WEST GERMANY

来源：

APPLIED PHYSICS LETTERS | 1973年 / 23卷 / 12期

关键词：

D O I：

10.1063/1.1654797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：704 / 705

页数：2

共 12 条

[1]

BADER R, 1968, EUR4269E EUR REP, P193

[2]

COLMAN D, 1972, INT ELECTRON DEVICES

[3]

FUJINUMA K, 1970, J JAP SOC APPL PHYS, V39, P71

[4] FABRICATION OF HIGH QUALITY SILICON JUNCTION DETECTORS BY LOW ENERGY ION IMPLANTATION [J].

KALBITZER, S ;

BADER, R ;

HERZER, H ;

BETHGE, K .

ZEITSCHRIFT FUR PHYSIK, 1967, 203 (01) :117-+

[5]

Kostka A., 1973, Radiation Effects, V19, P77, DOI 10.1080/00337577308232222

[6] INTEGRATED E AND DE/DX SEMICONDUCTOR PARTICLE DETECTORS MADE BY ION IMPLANTATION [J].

MARTIN, FW .

NUCLEAR INSTRUMENTS & METHODS, 1969, 72 (02) :223-+

[7] USE OF ION IMPLANTATION TECHNIQUES TO FABRICATE SEMICONDUCTOR NUCLEAR PARTICLE DETECTORS [J].

MAYER, JW .

NUCLEAR INSTRUMENTS & METHODS, 1968, 63 (02) :141-&

[8] ION IMPLANTATION OF SILICON .2. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS [J].

MAYER, JW ;

MARSH, OJ ;

SHIFRIN, GA ;

BARON, R .

CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4073-&

[9] CHARACTERISTICS OF ION-IMPLANTED CONTACTS FOR NUCLEAR PARTICLE DETECTORS .I. WINDOW THICKNESS OF ION-IMPLANTED SEMICONDUCTOR DETECTORS [J].

MEYER, O .

NUCLEAR INSTRUMENTS & METHODS, 1969, 70 (03) :279-+

[10]

MEYER O, 1968, EURATOM4269E REP, P161

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