INTEGRATED E AND DE/DX SEMICONDUCTOR PARTICLE DETECTORS MADE BY ION IMPLANTATION

被引:8
作者
MARTIN, FW
机构
[1] Ion Physics Corporation, Burlington
来源
NUCLEAR INSTRUMENTS & METHODS | 1969年 / 72卷 / 02期
关键词
D O I
10.1016/0029-554X(69)90163-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Detectors with two p-n junctions in one piece of silicon are described, having typical sensitive regions of width 9 and 1400 μm beginning 0.5 and 17 μm below the surface. © 1969.
引用
收藏
页码:223 / +
页数:1
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