THE DIFFUSION OF ELEMENTS IMPLANTED IN FILMS OF COBALT DISILICIDE

被引：55

作者：

THOMAS, O

GAS, P

CHARAI, A

LEGOUES, FK

MICHEL, A

SCILLA, G

DHEURLE, FM

机构：

来源：

关键词：

D O I：

10.1063/1.341560

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2973 / 2980

页数：8

共 42 条

[1] POSITRON LIFETIME AND DOPPLER STUDIES OF CO-SI ALLOYS
BALOGH, AG
BOTTYAN, L
BRAUER, G
DEZSI, I
MOLNAR, B
[J]. JOURNAL OF PHYSICS F-METAL PHYSICS, 1986, 16 (11): : 1725 - 1730
[2] d'Heurle F. M., 1986, Solid State Devices 1985. Invited Papers Presented at the 15th European Solid State Device Research Conference, P213
[3] BINARY-SYSTEMS COBALT-GERMANIUM AND NICKEL-GERMANIUM - COMPARATIVE-STUDY
DAYER, A
FESCHOTTE, P
[J]. JOURNAL OF THE LESS-COMMON METALS, 1980, 72 (01): : 51 - 70
[4] DIFFUSION IN INTERMETALLIC COMPOUNDS WITH THE CAF2 STRUCTURE - A MARKER STUDY OF THE FORMATION OF NISI2 THIN-FILMS
DHEURLE, F
PETERSSON, S
STOLT, L
STRIZKER, B
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5678 - 5681
[5] FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS
DHEURLE, FM
PETERSSON, CS
[J]. THIN SOLID FILMS, 1985, 128 (3-4) : 283 - 297
[6] RESISTIVITY OF THE SOLID-SOLUTIONS (CO-NI)SI2
DHEURLE, FM
TERSOFF, J
FINSTAD, TG
CROS, A
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 177 - 180
[7] DHEURLE FM, 1982, VLSI SCI TECHNOLOGY, P194
[8] DHEURLE FM, 1986, J MATER RES, V1, P217
[9] COBALT DISILICIDE - CRYSTAL-GROWTH AND PHYSICAL-PROPERTIES
DITCHEK, BM
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) : 207 - 210
[10] BORON, PHOSPHORUS, AND ARSENIC DIFFUSION IN TISI2
GAS, P
DELINE, V
DHEURLE, FM
MICHEL, A
SCILLA, G
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1634 - 1639