GAS SURFACE-REACTIONS IN THE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN USING WF6/SIH4 MIXTURES

被引：46

作者：

YU, ML

ELDRIDGE, BN

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.575855

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：625 / 629

页数：5

相关论文

共 11 条

[1] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN
BROADBENT, EK
RAMILLER, CL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) : 1427 - 1433
[2] REACTIVE STICKING COEFFICIENTS FOR SILANE AND DISILANE ON POLYCRYSTALLINE SILICON
BUSS, RJ
HO, P
BREILAND, WG
COLTRIN, ME
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2808 - 2819
[3] CREIGHTON JR, 1988, 1987 P WORKSH TUNGST, P63
[4] COMPACT PULSED MOLECULAR-BEAM SYSTEM FOR REAL-TIME REACTIVE SCATTERING FROM SOLID-SURFACES
ELDRIDGE, BN
YU, ML
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1987, 58 (06) : 1014 - 1026
[5] FOSTER RF, 1988, 1987 P WORKSH TUNGST, P69
[6] SOFT-X-RAY PHOTOEMISSION-STUDY OF THE SILICON FLUORINE ETCHING REACTION
MCFEELY, FR
MORAR, JF
HIMPSEL, FJ
[J]. SURFACE SCIENCE, 1986, 165 (01) : 277 - 287
[7] INTERACTION OF H2 WITH (100) .1. BINDING STATES
TAMM, PW
SCHMIDT, LD
[J]. JOURNAL OF CHEMICAL PHYSICS, 1969, 51 (12) : 5352 - &
[8] Wagman D. D., 1982, J PHYS CHEM REF D S2, V11
[9] WELL VA, 1988, 1987 P WORKSH TUNGST
[10] MECHANISM FOR CHEMICAL-VAPOR DEPOSITION OF TUNGSTEN ON SILICON FROM TUNGSTEN HEXAFLUORIDE
YARMOFF, JA
MCFEELY, FR
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (11) : 5213 - 5219