COMPOSITION EFFECTS IN THE GROWTH OF GA(IN)ASYP1-Y ALLOYS BY MBE

被引：73

作者：

FOXON, CT ^{[1
]}

JOYCE, BA ^{[1
]}

NORRIS, MT ^{[1
]}

机构：

[1] UNIV GLASGOW,DEPT ELECTR & ELECT ENGN,GLASGOW G12 8QQ,SCOTLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1980年 / 49卷 / 01期

关键词：

D O I：

10.1016/0022-0248(80)90073-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：132 / 140

页数：9

相关论文

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[17] STRUCTURE AND STOICHIOMETRY OF (100)-GAAS SURFACES DURING MOLECULAR-BEAM EPITAXY
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