COMPREHENSIVE MODELS FOR ANALYSIS OF HIGH-EFFICIENCY GAAS IMPATTS

被引：13

作者：

BLAKEY, PA ^{[1
]}

CULSHAW, B ^{[1
]}

GIBLIN, RA ^{[1
]}

机构：

[1] UCL, DEPT ELECTR & ELECT ENGN, LONDON WC1E 6BT, ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/T-ED.1978.19153

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：674 / 682

页数：9

相关论文

共 28 条

[1] DESIGN CRITERIA FOR HI DOPING DENSITY IN HI-LO HIGH-EFFICIENCY IMPATTS
BLAKEY, PA
[J]. ELECTRONICS LETTERS, 1976, 12 (13) : 329 - 330
[2] PROPAGATING AVALANCHE-ZONE MODE FOR HIGH-EFFICIENCY GAAS LO-HI-LO IMPATT STRUCTURES
BLAKEY, PA
[J]. ELECTRONICS LETTERS, 1975, 11 (25-2) : 630 - 631
[3] CRITERION FOR OPTIMUM PUNCH-THROUGH FACTOR OF GALLIUM-ARSENIDE IMPATT DIODES
BLAKEY, PA
CULSHAW, B
GIBLIN, RA
[J]. ELECTRONICS LETTERS, 1976, 12 (11) : 284 - 286
[4] BLAKEY PA, 1977, SOLID STATE ELECTRON, V1, P57
[5] SPACE-CHARGE-INDUCED NEGATIVE RESISTANCE IN AVALANCHE DIODES
BOWERS, HC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (06) : 343 - +
[6] EFFECTS OF TUNNELING ON HIGH-EFFICIENCY IMPATT AVALANCHE-DIODES
CHIVE, M
CONSTANT, E
LEFEBVRE, M
PRIBETICH, J
[J]. PROCEEDINGS OF THE IEEE, 1975, 63 (05) : 824 - 826
[7] EFFECT OF TRANSFERRED-ELECTRON VELOCITY MODULATION IN HIGH-EFFICIENCY GAAS IMPATT DIODES
CONSTANT, E
MIRCEA, A
PRIBETICH, J
FARRAYRE, A
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3934 - 3940
[8] INTERVALLEY SCATTERING IN GALLIUM-ARSENIDE AVALANCHE-DIODES
CULSHAW, B
BLAKEY, PA
[J]. PROCEEDINGS OF THE IEEE, 1976, 64 (04) : 569 - 571
[9] GRAPHICAL OPTIMIZATION OF DOPING PROFILE OF TRANSIT-TIME DEVICES
CULSHAW, B
[J]. PROCEEDINGS OF THE IEEE, 1975, 63 (02) : 321 - 323
[10] CHARGE-LIMITED DOMAINS IN GALLIUM-ARSENIDE AVALANCHE-DIODES
CULSHAW, B
BLAKEY, PA
GIBLIN, RA
[J]. ELECTRONICS LETTERS, 1975, 11 (05) : 102 - 104