PROPAGATING AVALANCHE-ZONE MODE FOR HIGH-EFFICIENCY GAAS LO-HI-LO IMPATT STRUCTURES

被引：3

作者：

BLAKEY, PA ^{[1
]}

机构：

[1] UCL, DEPT ELECTR & ELECT ENGN, TORRINGTON PL, LONDON WC1, ENGLAND

来源：

ELECTRONICS LETTERS | 1975年 / 11卷 / 25-2期

关键词：

D O I：

10.1049/el:19750480

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：630 / 631

页数：2

共 10 条

[1] EFFICIENCY ENHANCEMENT IN AVALANCHE-DIODES BY DEPLETION-REGION-WIDTH MODULATION [J].

BLAKEY, PA ;

CULSHAW, B ;

GIBLIN, RA .

ELECTRONICS LETTERS, 1974, 10 (21) :435-436

[2]

CLORFEINE AS, 1969, RCA REV, V30, P397

[3] EFFECT OF TRANSFERRED-ELECTRON VELOCITY MODULATION IN HIGH-EFFICIENCY GAAS IMPATT DIODES [J].

CONSTANT, E ;

MIRCEA, A ;

PRIBETICH, J ;

FARRAYRE, A .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3934-3940

[4] CHARGE-LIMITED DOMAINS IN GALLIUM-ARSENIDE AVALANCHE-DIODES [J].

CULSHAW, B ;

BLAKEY, PA ;

GIBLIN, RA .

ELECTRONICS LETTERS, 1975, 11 (05) :102-104

[5] HIGH-EFFICIENCY GAAS LO-HI-LO IMPATT DEVICES BY LIQUID-PHASE EPITAXY FOR X-BAND [J].

GOLDWASSER, RE ;

ROSZTOCZY, FE .

APPLIED PHYSICS LETTERS, 1974, 25 (01) :92-94

[6] HIGH-POWER HIGH-EFFICIENCY OPERATION OF READ-TYPE IMPATT-DIODE OSCILLATORS [J].

KIM, C ;

STEELE, R ;

BIERIG, R .

ELECTRONICS LETTERS, 1973, 9 (8-9) :173-174

[7]

KIM CK, 1973, 4TH P BIENN CORN EL, P299

[8] PREMATURE COLLECTION MODE IN IMPATT DIODES [J].

KUVAS, RL ;

SCHROEDER, WE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (08) :549-558

[9]

STEELE R, 1974, COMMUNICATION

[10] GAAS SCHOTTKY-READ DIODES FOR X-BAND OPERATION [J].

WISSEMAN, WR ;

SHAW, DW ;

ADAMS, RL ;

HASTY, TE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (06) :317-323

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