DESIGN CRITERIA FOR HI DOPING DENSITY IN HI-LO HIGH-EFFICIENCY IMPATTS

被引：1

作者：

BLAKEY, PA ^{[1
]}

机构：

[1] UCL, DEPT ELECT & ELECTR ENGN, LONDON WC1E 6BT, ENGLAND

来源：

ELECTRONICS LETTERS | 1976年 / 12卷 / 13期

关键词：

D O I：

10.1049/el:19760252

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：329 / 330

页数：2

共 12 条

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[5]

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[7]

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[8] CARRIER DIFFUSION IN SEMICONDUCTOR AVALANCHES [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (08) :549-558

[10] ENERGY-CONSERVATION CONSIDERATIONS IN CHARACTERIZATION OF IMPACT IONIZATION IN SEMICONDUCTORS [J].

OKUTO, Y ;

CROWELL, CR .

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