DRY ETCHING OF INDIUM-PHOSPHIDE

被引：30

作者：

DOUGHTY, GF

THOMS, S

LAW, V

WILKINSON, CDW

机构：

来源：

VACUUM | 1986年 / 36卷 / 11-12期

关键词：

D O I：

10.1016/0042-207X(86)90115-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：803 / 806

页数：4

共 15 条

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[7]

ERLICH DJ, 1980, APPL PHYS LETT, V36, P698

[8]

Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[9] REACTIVE-ION ETCHING OF GAAS AND INP USING CCL2F2-AR-O2 [J].

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[10]

KATSCHNER W, 1984, APPL PHYS LETT, V44, P353

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