TRANSIENT DECAY OF PERSISTENT PHOTOCONDUCTIVITY IN AL0.3GA0.7AS

被引：24

作者：

DOBSON, TW ^{[1
]}

SCALVI, LVA ^{[1
]}

WAGER, JF ^{[1
]}

机构：

[1] OREGON STATE UNIV,CTR ADV MAT RES,DEPT ELECT & COMP ENGN,CORVALLIS,OR 97331

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.346785

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transient decay of persistent photoconductivity (TDPPC) measurements were performed and analyzed in terms of models in which the TDPPC is associated with thermally activated electron capture into DX and a modification of the ionized impurity density, and hence the mobility, concomitant with electron capture. Quantitative agreement between theory and experiment was possible when Chadi and Chang's model for DX [Phys. Rev. Lett. 61, 873 (1988); Phys. Rev. B 39, 10063 (1989)] was employed in conjunction with a photo-induced shallow donor.

引用

页码：601 / 605

页数：5

共 19 条

[1] Casey H.C., 1978, HETEROSTRUCTURE LASE
[2] ENERGETICS OF DX-CENTER FORMATION IN GAAS AND ALXGA1-XAS ALLOYS
CHADI, DJ
CHANG, KJ
[J]. PHYSICAL REVIEW B, 1989, 39 (14): : 10063 - 10074
[3] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS
CHADI, DJ
CHANG, KJ
[J]. PHYSICAL REVIEW LETTERS, 1988, 61 (07) : 873 - 876
[4] BERYLLIUM AND SILICON DOPING STUDIES IN ALXGA1-XAS AND NEW RESULTS ON PERSISTENT PHOTOCONDUCTIVITY
CHAND, N
FISCHER, R
KLEM, J
HENDERSON, T
PEARAH, P
MASSELINK, WT
CHANG, YC
MORKOC, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 644 - 648
[5] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS
CHAND, N
HENDERSON, T
KLEM, J
MASSELINK, WT
FISCHER, R
CHANG, YC
MORKOC, H
[J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4481 - 4492
[6] HETEROJUNCTION-INDUCED PHENOMENA IN HALL-EFFECT AND PHOTOCONDUCTIVITY MEASUREMENTS OF EPITAXIAL ALXGA1-XAS
COLLINS, DM
MARS, DE
FISCHER, B
KOCOT, C
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 857 - 861
[7] DOBSN TW, 1989, MATER RES SOC S P
[8] DISCOVERY OF A NEW PHOTOINDUCED ELECTRON TRAP STATE SHALLOWER THAN THE DX CENTER IN SI DOPED ALXGA1-XAS
JIA, YB
LI, MF
ZHOU, J
GAO, JL
KONG, MY
YU, PY
CHAN, KT
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (11) : 5632 - 5634
[9] INVESTIGATION OF PERSISTENT PHOTOCONDUCTIVITY IN SI-DOPED N-ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
KUNZEL, H
FISCHER, A
KNECHT, J
PLOOG, K
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 32 (02): : 69 - 78
[10] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
LANG, DV
LOGAN, RA
JAROS, M
[J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030

← 1 2 →