DISCOVERY OF A NEW PHOTOINDUCED ELECTRON TRAP STATE SHALLOWER THAN THE DX CENTER IN SI DOPED ALXGA1-XAS

被引：28

作者：

JIA, YB

LI, MF

ZHOU, J

GAO, JL

KONG, MY

YU, PY

CHAN, KT

机构：

[1] UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB, DIV MAT & CHEM SCI, BERKELEY, CA 94720 USA

[3] HEWLETT PACKARD CO, DIV MICROWAVE TECHNOL, SANTA ROSA, CA 95403 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.343672

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：5632 / 5634

页数：3

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