CONTROL OF THE FABRICATION STEPS OF INP MIS TRANSISTORS BY MEANS OF SCANNING PHOTOLUMINESCENCE MEASUREMENTS

被引：3

作者：

COMMERE, B ^{[1
]}

GARRIGUES, M ^{[1
]}

KRAWCZYK, SK ^{[1
]}

LALLEMAND, C ^{[1
]}

SCHOHE, K ^{[1
]}

CANUT, B ^{[1
]}

机构：

[1] UNIV LYON 1, DEPT PHYS MAT, F-69622 VILLEURBANNE, FRANCE

来源：

JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期

关键词：

D O I：

10.1051/jphyscol:1988491

中图分类号：

学科分类号：

摘要：

引用

页码：431 / 436

页数：6

共 7 条

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[6] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J].

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