REMOTE POLAR PHONON-SCATTERING IN SI INVERSION-LAYERS

[1] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[2] HOT-ELECTRON EFFECTS IN SILICON QUANTIZED INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1976, 14 (12): : 5364 - 5371

[3] ELECTRON-TRANSPORT AND BREAKDOWN IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1422 - 1427

[4] ELECTRON-SCATTERING IN SILICON INVERSION LAYERS BY OXIDE AND SURFACE-ROUGHNESS [J]. SURFACE SCIENCE, 1976, 58 (01) : 178 - 181

[5] HESS K, 1979, SOLID STATE COMMUN, V30, P807, DOI 10.1016/0038-1098(79)90051-6

[6] MAHAN GD, 1974, ELEMENTARY EXCITAT B, P93

[7] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &

[8] Vogl P., 1980, Physics of Nonlinear Transport in Semiconductors. Proceedings of the NATO Advanced Study Institute on Physics of Nonlinear Electron Transport, P75

[9] VOGL P, COMMUNICATION

[1] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[2] HOT-ELECTRON EFFECTS IN SILICON QUANTIZED INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1976, 14 (12): : 5364 - 5371

[3] ELECTRON-TRANSPORT AND BREAKDOWN IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1422 - 1427

[4] ELECTRON-SCATTERING IN SILICON INVERSION LAYERS BY OXIDE AND SURFACE-ROUGHNESS [J]. SURFACE SCIENCE, 1976, 58 (01) : 178 - 181

[5] HESS K, 1979, SOLID STATE COMMUN, V30, P807, DOI 10.1016/0038-1098(79)90051-6

[6] MAHAN GD, 1974, ELEMENTARY EXCITAT B, P93

[7] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &

[8] Vogl P., 1980, Physics of Nonlinear Transport in Semiconductors. Proceedings of the NATO Advanced Study Institute on Physics of Nonlinear Electron Transport, P75

[9] VOGL P, COMMUNICATION