CHARACTERIZATION OF TIN OXIDE THIN-FILMS DEPOSITED BY REACTIVE SPUTTERING

被引：21

作者：

STEDILE, FC ^{[1
]}

DEBARROS, BAS ^{[1
]}

LEITE, CVB ^{[1
]}

FREIRE, FL ^{[1
]}

BAUMVOL, IJR ^{[1
]}

SCHREINER, WH ^{[1
]}

机构：

[1] PONTIFICIA UNIV CATOLICA, DEPT FIS, BR-22452 RIO DE JANEIRO, BRAZIL

来源：

关键词：

D O I：

10.1016/0040-6090(89)90734-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：285 / 291

页数：7

共 19 条

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[J]. SENSORS AND ACTUATORS, 1984, 6 (01): : 35 - 50
[3] THE INTERACTION OF TIN OXIDE-FILMS WITH O2, H-2, NO, AND H2S
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 393 - 397
[4] THIN-FILM SEMICONDUCTOR NOX SENSOR
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) : 1875 - 1880
[5] APPLICATION OF THE MOSSBAUER-EFFECT TO THE CHARACTERIZATION OF AN AMORPHOUS TIN-OXIDE SYSTEM
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[6] HEILAND G, 1982, SENSOR ACTUATOR, V2, P343, DOI 10.1016/0250-6874(81)80055-8
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[8] ELECTRICAL-PROPERTIES OF NONSTOICHIOMETRIC TIN OXIDE-FILMS OBTAINED BY THE DC REACTIVE SPUTTERING METHOD
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PISARKIEWICZ, T
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[9] LEJA E, 1979, J PHYS, V40, P408
[10] PATNAIK BK, 1988, IN PRESS NUCL INST B