MINIMUM OXYGEN DOSE FOR RELIABLE APPLICATION OF SIMOX

被引：2

作者：

BADENES, G ^{[1
]}

BURBACH, G ^{[1
]}

GASSEL, H ^{[1
]}

VOGT, H ^{[1
]}

WALTER, A ^{[1
]}

机构：

[1] CSIC,CTR NATL MICROELECTR,E-08193 BARCELONA,SPAIN

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 12卷 / 1-2期

关键词：

D O I：

10.1016/0921-5107(92)90276-F

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon-on-insulator structures were fabricated by several high dose oxygen implantations in a dose range from 2.0 x 10(17) cm-2 to 2.4 x 10(18) cm-2. The thickness of the buried oxide was determined by preferential etching followed by measurements of the step heights. As expected, the thickness of the buried layer increased linearly with the implanted dose. Large-area capacitors using the silicon film as one electrode and the substrate as the other, were produced in a LOCOS process. These devices rendered possible the study of the electrical properties of the buried oxide by capacitance-voltage and current-voltage (C(V) and I(V)) measurements. Knowledge of the dose dependence of the buried oxide properties allow adjustment of the minimum implantation dose necessary to comply with given requirements.

引用

页码：149 / 151

页数：3

共 8 条

[1] MEASUREMENT OF SOI FILM THICKNESS [J].