HIGH-QUALITY SILICON-ON-INSULATOR SUBSTRATES BY IMPLANTED OXYGEN IONS

被引：7

作者：

BELZ, J

BURBACH, G

VOGT, H

PETERWEIDEMANN, J

ZIMMER, G

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(89)90282-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：429 / 433

页数：5

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