共 27 条
[11]
ARSENIC-INDUCED INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION MEASUREMENTS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986, 4 (02)
:560-563
[12]
ELECTRON-SPECTROSCOPY OF VACUUM ANNEALING EFFECTS ON SURFACES OF SOME BINARY AND TERNARY III-V SEMICONDUCTORS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (02)
:613-616
[14]
DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS
[J].
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,
1983, 31 (01)
:1-8
[16]
REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATION STUDY OF GA DESORPTION FROM MOLECULAR-BEAM EPITAXIALLY GROWN ALXGA1-XAS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986, 4 (02)
:594-597
[18]
Seah M. P., 1979, Surface and Interface Analysis, V1, P2, DOI 10.1002/sia.740010103
[19]
SURFACE ORIENTATION DEPENDENT SURFACE KINETICS AND INTERFACE ROUGHENING IN MOLECULAR-BEAM EPITAXIAL-GROWTH OF III-V-SEMICONDUCTORS - A MONTE-CARLO STUDY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1983, 1 (02)
:305-312
[20]
THEORETICAL INVESTIGATIONS OF THE NATURE OF THE NORMAL AND INVERTED GAAS-ALGAAS STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1984, 2 (03)
:576-581