EXPERIMENTAL-EVIDENCE OF DIFFERENCE IN SURFACE AND BULK COMPOSITIONS OF ALXGA1-XAS, ALXIN1-XAS AND GAXIN1-XAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引:111
作者
MASSIES, J
TURCO, F
SALETES, A
CONTOUR, JP
机构
关键词
D O I
10.1016/0022-0248(87)90076-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:307 / 314
页数:8
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共 27 条
[11]   ARSENIC-INDUCED INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION MEASUREMENTS [J].
LEWIS, BF ;
FERNANDEZ, R ;
MADHUKAR, A ;
GRUNTHANER, FJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :560-563
[12]   ELECTRON-SPECTROSCOPY OF VACUUM ANNEALING EFFECTS ON SURFACES OF SOME BINARY AND TERNARY III-V SEMICONDUCTORS [J].
MASSIES, J ;
ROCHETTE, JF ;
DELESCLUSE, P .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :613-616
[13]   INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE MORPHOLOGY OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
MORKOC, H ;
DRUMMOND, TJ ;
KOPP, W ;
FISCHER, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) :824-826
[14]   DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J].
NEAVE, JH ;
JOYCE, BA ;
DOBSON, PJ ;
NORTON, N .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01) :1-8
[15]   ALLOY CLUSTERING IN GA1-XALXAS COMPOUND SEMICONDUCTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].
PETROFF, PM ;
CHO, AY ;
REINHART, FK ;
GOSSARD, AC ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1982, 48 (03) :170-173
[16]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATION STUDY OF GA DESORPTION FROM MOLECULAR-BEAM EPITAXIALLY GROWN ALXGA1-XAS [J].
RALSTON, J ;
WICKS, GW ;
EASTMAN, LF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :594-597
[17]   HARTREE-SLATER SUBSHELL PHOTOIONIZATION CROSS-SECTIONS AT 1254 AND 1487EV [J].
SCOFIELD, JH .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1976, 8 (02) :129-137
[18]  
Seah M. P., 1979, Surface and Interface Analysis, V1, P2, DOI 10.1002/sia.740010103
[19]   SURFACE ORIENTATION DEPENDENT SURFACE KINETICS AND INTERFACE ROUGHENING IN MOLECULAR-BEAM EPITAXIAL-GROWTH OF III-V-SEMICONDUCTORS - A MONTE-CARLO STUDY [J].
SINGH, J ;
MADHUKAR, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :305-312
[20]   THEORETICAL INVESTIGATIONS OF THE NATURE OF THE NORMAL AND INVERTED GAAS-ALGAAS STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].
SINGH, J ;
BAJAJ, KK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :576-581