DETERMINATION OF THE ELECTRON SATURATION VELOCITY IN PSEUDOMORPHIC ALXGA1-XAS/INYGA1-YAS MODFETS AT 300-K AND 100-K

被引：19

作者：

DICKMANN, J ^{[1
]}

HEEDT, CH ^{[1
]}

DAEMBKES, H ^{[1
]}

机构：

[1] UNIV DUISBURG GESAMTHSCH,ELECT ENGN,D-4100 DUISBURG,FED REP GER

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期

关键词：

D O I：

10.1109/16.40916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2315 / 2319

页数：5

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