DEFECT PRODUCTION IN PHOSPHORUS ION-IMPLANTED SIO2(43 NM)/SI STUDIED BY A VARIABLE-ENERGY POSITRON BEAM

被引：32

作者：

UEDONO, A

WEI, L

DOSHO, C

KONDO, H

TANIGAWA, S

SUGIURA, J

OGASAWARA, M

机构：

[1] UNIV TSUKUBA,INST MAT SCI,TSUKUBA,IBARAKI 305,JAPAN

[2] HITACHI LTD,CTR DEVICE DEV,OME,TOKYO 198,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 02期

关键词：

POSITRON ANNIHILATION; SLOW POSITRON BEAM; DOPPLER BROADENING PROFILE; SILICON; DEFECT; ION IMPLANTATION; OXIDE SEMICONDUCTOR INTERFACE;

D O I：

10.1143/JJAP.30.201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vacancy-type defects in 150-keV P+-implanted SiO2 (43 nm)/Si(100) specimens were studied by a variable-energy positron beam. The results show that the damaged layer induced by P+-implantation extends far beyond the stopping range of phosphorus ions. From isochronal annealing experiments, it was found that oxygen atoms recoiled from the SiO2 layer into the Si substrate, forming stable oxygen-vacancy complexes in the substrate near the interface. The final recovery of vacancy-type defects was observed at 1200-degrees-C.

引用

页码：201 / 206

页数：6

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