MATERIAL-DEPENDENT AMORPHIZATION AND EPITAXIAL CRYSTALLIZATION IN ION-IMPLANTED ALAS/GAAS LAYER STRUCTURES

被引：27

作者：

CULLIS, AG ^{[1
]}

CHEW, NG ^{[1
]}

WHITEHOUSE, CR ^{[1
]}

JACOBSON, DC ^{[1
]}

POATE, JM ^{[1
]}

PEARTON, SJ ^{[1
]}

机构：

[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 12期

关键词：

D O I：

10.1063/1.101657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1211 / 1213

页数：3

共 12 条

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[7] IMPURITY INDUCED LAYER DISORDERING OF SI IMPLANTED ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES - LAYER DISORDERING VIA DIFFUSION FROM EXTRINSIC DISLOCATION LOOPS
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1329 - 1334
[8] COMPOSITIONAL DISORDERING OF GAAS-ALXGA1-XAS SUPERLATTICE BY GA FOCUSED ION-BEAM IMPLANTATION AND ITS APPLICATION TO SUB-MICRON STRUCTURE FABRICATION
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (07): : L516 - L518
[9] DISORDERING OF SI-DOPED ALAS/GAAS SUPERLATTICE BY ANNEALING
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L623 - L624
[10] COMPARATIVE STUDIES OF ION-INDUCED MIXING OF GAAS-ALAS SUPERLATTICES
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[J]. APPLIED PHYSICS LETTERS, 1988, 52 (18) : 1487 - 1489

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