PERIODIC CONDUCTANCE FLUCTUATIONS IN QUASI-ONE-DIMENSIONAL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH SHALLOW-TRENCH ISOLATIONS

被引：10

作者：

TAKEUCHI, K ^{[1
]}

NEWBURY, R ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.43.7324

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results of conductance measurements in 0.2-mu-m-wide and 0.15-mu-m-long silicon metal-oxide-semiconductor field-effect transitions with shallow-trench isolations are presented. At T = 1.2 K, two kinds of periodic conductance fluctuations are observed; fine structure near threshold and plateaus in the higher conductance regime (approximately 0.1 mS). The latter are accentuated by applying moderate magnetic fields of 1-2 T, remaining unchanged in their positions. We attribute these features to a quasi-one-dimensional transport mechanism caused by strain-induced narrow potential wells along the trench isolations.

引用

页码：7324 / 7327

页数：4

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