PERIODIC CONDUCTANCE FLUCTUATIONS IN QUASI-ONE-DIMENSIONAL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH SHALLOW-TRENCH ISOLATIONS

被引：10

作者：

TAKEUCHI, K ^{[1
]}

NEWBURY, R ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.43.7324

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results of conductance measurements in 0.2-mu-m-wide and 0.15-mu-m-long silicon metal-oxide-semiconductor field-effect transitions with shallow-trench isolations are presented. At T = 1.2 K, two kinds of periodic conductance fluctuations are observed; fine structure near threshold and plateaus in the higher conductance regime (approximately 0.1 mS). The latter are accentuated by applying moderate magnetic fields of 1-2 T, remaining unchanged in their positions. We attribute these features to a quasi-one-dimensional transport mechanism caused by strain-induced narrow potential wells along the trench isolations.

引用

页码：7324 / 7327

页数：4

共 22 条

[11] APERIODIC MAGNETORESISTANCE OSCILLATIONS IN NARROW INVERSION-LAYERS IN SI [J].

LICINI, JC ;

BISHOP, DJ ;

KASTNER, MA ;

MELNGAILIS, J .

PHYSICAL REVIEW LETTERS, 1985, 55 (27) :2987-2990

[12] EXPERIMENTAL-DETERMINATION OF LARGE INTRINSIC EDGE STRESSES IN NARROW SILICON STRUCTURES [J].

PAQUIN, N ;

POOKE, DM ;

PEPPER, M ;

GUNDLACH, A ;

RUTHVEN, A .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (12) :1080-1083

[13] BALLISTIC TRANSPORT IN ONE-DIMENSION - ADDITIONAL QUANTIZATION PRODUCED BY AN ELECTRIC-FIELD [J].

PATEL, NK ;

MARTINMORENO, L ;

PEPPER, M ;

NEWBURY, R ;

FROST, JEF ;

RITCHIE, DA ;

JONES, GAC ;

JANSSEN, JTMB ;

SINGLETON, J ;

PERENBOOM, JAAJ .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (34) :7247-7254

[14] ELECTRON ELECTRON-SCATTERING IN NARROW SI ACCUMULATION LAYERS [J].

POOKE, DM ;

PAQUIN, N ;

PEPPER, M ;

GUNDLACH, A .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (20) :3289-3293

[15] MAGNETOCONDUCTANCE AND QUANTIZED CONFINEMENT IN NARROW SILICON INVERSION-LAYERS [J].

SKOCPOL, WJ ;

JACKEL, LD ;

HOWARD, RE ;

CRAIGHEAD, HG ;

FETTER, LA ;

MANKIEWICH, PM ;

GRABBE, P ;

TENNANT, DM .

SURFACE SCIENCE, 1984, 142 (1-3) :14-18

[16] CONDUCTANCE FLUCTUATIONS FROM THE LOCAL ALTERATION OF A HOPPING PATH [J].

STROH, RJ ;

PEPPER, M .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (44) :8481-8489

[17]

VANWEES BJ, 1988, PHYS REV B, V39, P6283

[18] TEMPERATURE-DEPENDENCE OF MINORITY HOLE MOBILITY IN HEAVILY DOPED SILICON [J].

WANG, CH ;

MISIAKOS, K ;

NEUGROSCHEL, A .

APPLIED PHYSICS LETTERS, 1990, 57 (02) :159-161

[19] QUASI ONE-DIMENSIONAL CONDUCTION IN MULTIPLE, PARALLEL INVERSION LINES [J].

WARREN, AC ;

ANTONIADIS, DA ;

SMITH, HI .

PHYSICAL REVIEW LETTERS, 1986, 56 (17) :1858-1861

[20] ORIGIN OF THE PEAKED STRUCTURE IN THE CONDUCTANCE OF ONE-DIMENSIONAL SILICON ACCUMULATION LAYERS [J].

WEBB, RA ;

HARTSTEIN, A ;

WAINER, JJ ;

FOWLER, AB .

PHYSICAL REVIEW LETTERS, 1985, 54 (14) :1577-1580

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