TEMPERATURE-DEPENDENCE OF MINORITY HOLE MOBILITY IN HEAVILY DOPED SILICON

被引：28

作者：

WANG, CH

MISIAKOS, K

NEUGROSCHEL, A

机构：

[1] Department of Electrical Engineering, University of Florida, Gainesville

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.103970

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature dependence of the minority hole mobility μ p(ND,T) in heavily doped n+ silicon in the doping range from 1018 to 2.4×1019 cm-3 was investigated. The preliminary measurements show that the mobility is strongly temperature dependent. For temperatures below 200 K the minority-carrier hole mobility increases with increasing doping, in contrast to the opposite dependence for the majority hole mobility in p+ silicon. Analytical fits to the measured data useful for low-temperature modeling for bipolar devices are given.

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页码：159 / 161

页数：3

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