GROWTH OF SI1-XGEX BY RAPID THERMAL CHEMICAL VAPOR-DEPOSITION AND APPLICATION TO HETEROJUNCTION BIPOLAR-TRANSISTORS

Rapid thermal chemical vapor deposition has been applied towards the growth of Si and Si1-xGe(x) structures on a 100 angstrom scale. In this paper the relative merits of gas switching versus temperature switching for the growth of such structures are discussed. Active temperature control in the 600-700-degrees-C range using infrared transmission for temperature measurement is demonstrated. The growth technique is applied to 45 angstrom period superlattices with individual layer temperature control, and to heterojunction bipolar transistors with near-ideal electrical characteristics.