SECONDARY ION MASS-SPECTROMETRY OF HYPER-ABRUPT DOPING TRANSITIONS FABRICATED BY LIMITED REACTION PROCESSING

被引:18
作者
TURNER, JE [1 ]
AMANO, J [1 ]
GRONET, CM [1 ]
GIBBONS, JF [1 ]
机构
[1] STANFORD UNIV,STANFORD,CA 94305
关键词
D O I
10.1063/1.97793
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1601 / 1603
页数:3
相关论文
共 16 条
  • [1] ALLEN FG, 1985, THIN SOLID FILMS, V123, P237
  • [2] DEPTH RESOLUTION OF SPUTTER PROFILING
    ANDERSEN, HH
    [J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140
  • [3] BEAN JC, 1985, 1ST P INT S SIL MOL
  • [4] RECOIL RANGE DISTRIBUTIONS IN MULTILAYERED TARGETS
    CHRISTEL, LA
    GIBBONS, JF
    MYLROIE, S
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 187 - 198
  • [5] LIMITED REACTION PROCESSING - SILICON EPITAXY
    GIBBONS, JF
    GRONET, CM
    WILLIAMS, KE
    [J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 721 - 723
  • [6] GILES MD, 1986, MATER RES SOC S P, V69, P323
  • [7] THIN, HIGHLY DOPED LAYERS OF EPITAXIAL SILICON DEPOSITED BY LIMITED REACTION PROCESSING
    GRONET, CM
    STURM, JC
    WILLIAMS, KE
    GIBBONS, JF
    WILSON, SD
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (15) : 1012 - 1014
  • [8] THEORETICAL-ANALYSIS OF SPUTTER PROFILING
    REMMERIE, J
    MAES, HE
    [J]. SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 1985, 40 (5-6) : 787 - 793
  • [9] Schulz F., 1973, Radiation Effects, V18, P211, DOI 10.1080/00337577308232124
  • [10] SIMS INVESTIGATION OF VERY SHALLOW IMPLANTED SI LAYERS
    SHEPHERD, FR
    ROBINSON, WH
    BROWN, JD
    PHILLIPS, BF
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 991 - 994