TEMPERATURE COMPENSATION OF PIEZORESISTIVE PRESSURE SENSORS

被引:44
作者
AKBAR, M
SHANBLATT, MA
机构
[1] Department of Electrical Engineering, Michigan State University, East Lansing
关键词
D O I
10.1016/0924-4247(92)80161-U
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A major problem associated with piezoresistive pressure sensors is their cross sensitivity to temperature. The influence of temperature is manifested as a change in the span and offset of the sensor output. Moreover, in batch fabrication, minor process variations change the temperature characteristics for individual units. In this paper, a simulation model for the batch fabrication of piezoresistive pressure sensors is presented. An error band for the sensor response is determined in terms of processing variations for a temperature range of -40 to 130-degrees-C over a pressure range of 0 to 45 psi. Utilizing this information, a new temperature-compensation technique, especially suited for batch fabrication, is described. This technique shows very encouraging results in removing the zero pressure offset and significantly reduces the errors caused by processing variations on the same wafer.
引用
收藏
页码:155 / 162
页数:8
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