A COMPREHENSIVE ANALYTICAL MODEL FOR METAL-INSULATOR-SEMICONDUCTOR (MIS) DEVICES - A SOLAR-CELL APPLICATION

被引：36

作者：

DOGHISH, MY ^{[1
]}

HO, FD ^{[1
]}

机构：

[1] UNIV ALABAMA,DEPT ELECT & COMP ENGN,HUNTSVILLE,AL 35899

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 08期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/16.223704

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As an application of our previous model for MIS (Metal-Insulator-Semiconductor) devices, a detailed model for MIS solar cells has been developed that covers a wide range of parameters which include surface states, silicon dioxide thickness, substrate doping, fixed oxide charges, substrate thickness, and metal work function. It also takes the nonequilibrium conditions into consideration. The effects of using the actual permittivity and barrier height of thin oxide are discussed.

引用

页码：1446 / 1454

页数：9

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