IDENTIFICATION OF THE NEUTRAL CHARGE STATE OF PLATINUM IN SILICON

被引:6
作者
OMLING, P
KLEVERMAN, M
EMANUELSSON, P
OLAJOS, J
GRIMMEISS, HG
机构
[1] Univ of Lund, Lund, Swed, Univ of Lund, Lund, Swed
关键词
MAGNETIC RESONANCE - PLATINUM AND ALLOYS - Optical Properties;
D O I
10.1016/0038-1098(88)90337-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A comparison of optical cross sections of platinum in silicon obtained from Fourier photoconductivity and photoelectron paramagnetic resonance (photo-EPR) measurements shows that the detailed structure in the high-resolution Fourier spectra is caused by the neutral Pt**o defect. The hole ionization of Pt**o leads to the Pt** minus defect observed in EPR.
引用
收藏
页码:557 / 560
页数:4
相关论文
共 13 条
[1]   EFFECTIVE MASS-LIKE STATES OF THE DEEP ACCEPTOR LEVEL OF AU AND PT IN SILICON [J].
ARMELLES, G ;
BARRAU, J ;
BROUSSEAU, M ;
PAJOT, B ;
NAUD, C .
SOLID STATE COMMUNICATIONS, 1985, 56 (03) :303-305
[2]   DEEP STATES ASSOCIATED WITH PLATINUM IN SILICON - A PHOTOLUMINESCENCE STUDY [J].
ARMELLES, G ;
BARRAU, J ;
BROUSSEAU, M ;
NOGUIER, JP .
PHYSICAL REVIEW B, 1986, 33 (02) :1243-1249
[3]   ZEEMAN AND PIEZOSPECTROSCOPY STUDIES OF THE 811 MEV NO-PHONON LINE STRUCTURE IN PLATINUM-DOPED SILICON [J].
ARMELLES, G ;
BARRAU, J ;
THOMAS, V ;
BROUSSEAU, M .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (14) :2593-2600
[4]   PHOTOIONIZATION CROSS-SECTIONS IN PLATINUM-DOPED SILICON [J].
BRAUN, S ;
GRIMMEISS, HG ;
SPANN, K .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3883-3887
[5]   ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON [J].
BROTHERTON, SD ;
BRADLEY, P ;
BICKNELL, J .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3396-3403
[6]   ENERGY-LEVELS IN SILICON [J].
CHEN, JW ;
MILNES, AG .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 :157-228
[7]   STRAIN-MODULATED ELECTRON-SPIN-RESONANCE STUDY OF PT- IN SILICON [J].
HENNING, JCM ;
EGELMEERS, ECJ .
PHYSICAL REVIEW B, 1983, 27 (07) :4002-4012
[8]  
KLEVERMAN M, 1988, IN PRESS PHYS REV B, V15
[9]   PHOTOIONIZATION CROSS-SECTION STUDIES OF THE PLATINUM-DONOR CENTER IN SILICON [J].
MAYO, S ;
LOWNEY, JR .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) :2626-2632
[10]   ELECTRON-PARAMAGNETIC RESONANCE OF PT- IN SILICON - ISOLATED SUBSTITUTIONAL PT VERSUS PT-PT PAIRS [J].
MILLIGAN, RF ;
ANDERSON, FG ;
WATKINS, GD .
PHYSICAL REVIEW B, 1984, 29 (05) :2819-2820