DEEP STATES ASSOCIATED WITH PLATINUM IN SILICON - A PHOTOLUMINESCENCE STUDY

被引：10

作者：

ARMELLES, G ^{[1
]}

BARRAU, J ^{[1
]}

BROUSSEAU, M ^{[1
]}

NOGUIER, JP ^{[1
]}

机构：

[1] LE SILICIUM,USINE TOURS,SEMICON,F-37001 TOURS,FRANCE

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.33.1243

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1243 / 1249

页数：7

共 9 条

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[7]

Koster G. F., 1963, PROPERTIES 32 POINT

[8] ENERGY-LEVELS FOR PLATINUM AND PALLADIUM IN SILICON MEASURED BY DARK TRANSIENT CAPACITANCE TECHNIQUE [J].

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[9] SPIN RESONANCE OF PD AND PT IN SILICON [J].

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