CARRIER CONCENTRATION MODEL FOR N-TYPE SILICON AT LOW-TEMPERATURES

被引：3

作者：

DICKSTEIN, RM ^{[1
]}

TITCOMB, SL ^{[1
]}

ANDERSON, RL ^{[1
]}

机构：

[1] UNIV VERMONT,DEPT COMP SCI & ELECT ENGN,CRYOELECTR LAB,BURLINGTON,VT 05405

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 06期

关键词：

D O I：

10.1063/1.344253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2437 / 2441

页数：5

共 16 条

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[9] DOPANT DENSITY AND TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY AND RESISTIVITY IN N-TYPE SILICON [J].

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[10]

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