AN IMPROVED SINGLE EVENT RESISTIVE-HARDENING TECHNIQUE FOR CMOS STATIC RAMS

被引：10

作者：

JOHNSON, RL

DIEHL, SE

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334679

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1730 / 1733

页数：4

共 7 条

[1] SINGLE EVENT ERROR IMMUNE CMOS RAM [J].

ANDREWS, JL ;

SCHROEDER, JE ;

GINGERICH, BL ;

KOLASINSKI, WA ;

KOGA, R ;

DIEHL, SE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2040-2043

[2] SINGLE EVENT UPSET RATE ESTIMATES FOR A 16-K CMOS SRAM [J].

BROWNING, JS ;

KOGA, R ;

KOLASINSKI, WA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4133-4139

[3] ERROR ANALYSIS AND PREVENTION OF COSMIC ION-INDUCED SOFT ERRORS IN STATIC CMOS RAMS [J].

DIEHL, SE ;

OCHOA, A ;

DRESSENDORFER, PV ;

KOGA, R ;

KOLASINSKI, WA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2032-2039

[4] SINGLE EVENT UPSET IMMUNE INTEGRATED-CIRCUITS FOR PROJECT GALILEO [J].

GIDDINGS, AE ;

HEWLETT, FW ;

TREECE, RK ;

NICHOLS, DK ;

SMITH, LS ;

ZOUTENDYK, JA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4159-4163

[5] SIMULATION APPROACH FOR MODELING SINGLE EVENT UPSETS ON ADVANCED CMOS SRAMS [J].

JOHNSON, RL ;

DIEHLNAGLE, SE ;

HAUSER, JR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4122-4127

[6] COMPARISON OF ANALYTICAL MODELS AND EXPERIMENTAL RESULTS FOR SINGLE EVENT UPSET IN CMOS SRAMS [J].

MNICH, TM ;

DIEHL, SE ;

SHAFER, BD ;

KOGA, R ;

KOLASINSKI, WA ;

OCHOA, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4620-4623

[7]

WEATHERFORD TR, 1986, IEEE T NUCL SCI, V33

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