CURRENT-CONTROLLED GROWTH, SEGREGATION AND AMPHOTERIC BEHAVIOR OF SI IN GAAS FROM SI-DOPED SOLUTIONS

被引：21

作者：

JASTRZEBSKI, L

GATOS, HC

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1977年 / 42卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(77)90211-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：309 / 314

页数：6

共 13 条

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[8] CURRENT-CONTROLLED GROWTH AND DOPANT MODULATION IN LIQUID-PHASE EPITAXY [J].

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[9] ELECTRIC-CURRENT CONTROLLED GROWTH AND DOPING MODULATION IN GAAS LIQUID-PHASE EPITAXY [J].

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