COMPETITIVE REACTIONS OF FLUORINE AND OXYGEN WITH W, WSI2, AND SI SURFACES IN REACTIVE ION ETCHING USING CF4/O2

被引：25

作者：

OEHRLEIN, GS

LINDSTOM, JL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.576225

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1035 / 1041

页数：7

共 25 条

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[12] PLASMA-ASSISTED ETCHING OF TUNGSTEN FILMS - A QUARTZ-CRYSTAL MICROBALANCE STUDY
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[13] AN XPS STUDY OF XEF2 DRY ETCHING OF TUNGSTEN SILICIDE
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IGNATIEV, A
[J]. SURFACE SCIENCE, 1988, 197 (1-2) : 99 - 108
[14] HESS DW, 1988, SOLID STATE TECHNOL, V31, P97
[15] OXIDATION OF SI-RICH CHEMICAL-VAPOR-DEPOSITED FILMS OF TUNGSTEN SILICIDE
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[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1987, 31 (06) : 634 - 640
[16] CHEMICAL PROCESSES IN FLUORINE-BASED ETCHING REACTIONS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 879 - 880
[17] SOFT-X-RAY PHOTOEMISSION-STUDY OF THE SILICON FLUORINE ETCHING REACTION
MCFEELY, FR
MORAR, JF
HIMPSEL, FJ
[J]. SURFACE SCIENCE, 1986, 165 (01) : 277 - 287
[18] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS
MOGAB, CJ
ADAMS, AC
FLAMM, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3796 - 3803
[19] SURFACE PROCESSES IN CF4/O2 REACTIVE ETCHING OF SILICON
OEHRLEIN, GS
ROBEY, SW
LINDSTROM, JL
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (14) : 1170 - 1172
[20] PLASMA-ETCHING OF REFRACTORY-METALS (W, MO, TA) AND SILICON IN SF6 AND SF6-O2 - AN ANALYSIS OF THE REACTION-PRODUCTS
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[J]. PLASMA CHEMISTRY AND PLASMA PROCESSING, 1985, 5 (04) : 333 - 351

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