AN XPS STUDY OF XEF2 DRY ETCHING OF TUNGSTEN SILICIDE

被引：5

作者：

GROSSMAN, E

BENSAOULA, A

IGNATIEV, A

机构：

来源：

SURFACE SCIENCE | 1988年 / 197卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(88)90575-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：99 / 108

页数：10

共 18 条

[1] AES STUDIES ON THIN-FILM MOSI2
ATZRODT, V
TITEL, W
WIRTH, T
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 75 (01): : K15 - K20
[2] ETCHING OF TUNGSTEN WITH XEF2 - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY
BENSAOULA, A
GROSSMAN, E
IGNATIEV, A
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) : 4587 - 4590
[3] ION ENHANCED REACTIVE ETCHING OF TUNGSTEN SINGLE-CRYSTALS AND FILMS WITH XEF2
BENSAOULA, A
STROZIER, JA
IGNATIEV, A
YU, J
WOLFE, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1921 - 1924
[4] DRY ETCHING OF TISI2
CADIEN, KC
SIVARAM, S
REINTSEMA, CD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 739 - 743
[5] NEAR-SURFACE CONTAMINATION OF SILICON DURING REACTIVE ION-BEAM ETCHING WITH CHLORINE
CHARVAT, PK
KRUEGER, EE
RUOFF, AL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 812 - 817
[6] PLASMA-ETCHING OF REFRACTORY GATES FOR VLSI APPLICATIONS
CHOW, TP
STECKL, AJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2325 - 2335
[7] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING
COBURN, JW
WINTERS, HF
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196
[8] PROPERTIES OF TITANIUM SILICIDE FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
HEMMES, DG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06): : 1332 - 1335
[9] CAPACITANCE VOLTAGE CHARACTERIZATION OF SILICIDE GAAS SCHOTTKY CONTACTS
JACKSON, TN
DEGELORMO, JF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06): : 1676 - 1679
[10] TITANIUM SILICIDE FORMATION BY ION-BEAM MIXING AND RAPID THERMAL ANNEALING
MATTIUSSI, GA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06): : 1352 - 1357

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