EFFECT OF THE (H11) ORIENTATIONS AND POLARITIES OF GAAS SUBSTRATES ON CDTE BUFFER LAYER STRUCTURAL-PROPERTIES

被引：19

作者：

TROMSONCARLI, A

PATRIARCHE, G

DRUILHE, R

LUSSON, A

MARFAING, Y

TRIBOULET, R

BROWN, PD

BRINKMAN, AW

机构：

[1] CNRS,PHYS MAT LAB,F-92195 MEUDON,FRANCE

[2] UNIV DURHAM,DEPT PHYS,DURHAM DH1 3HP,ENGLAND

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 16卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(93)90031-H

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CdTe layers were grown by metallo-organic chemical vapour deposition on GaAs substrates of different (h11) orientations and polarities. The morphology and structural properties of the epilayers were investigated using several techniques, namely scanning electron microscopy, transmission electron microscopy and double crystal X-ray diffraction. The best results were obtained for epitaxy on (211) A and (311) B substrate orientations. The occurrence of twinning in the cases of opposite polarity, i.e. (211) B and (311) A, was attributed to the presence of single dangling bonds on the etched substrate surfaces.

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页码：145 / 150

页数：6

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