PHONON-INDUCED STRUCTURES IN TUNNELING CHARACTERISTICS OF TYPE SI-OXIDE-METAL JUNCTIONS

被引：16

作者：

TSUI, DC

DUNKLEBERGER, LN

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 18卷 / 05期

关键词：

D O I：

10.1063/1.1653623

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：200 / +

页数：1

共 13 条

[1] A STUDY OF VIBRATIONS OF BORON AND PHOSPHORUS IN SILICON BY INFRA-RED ABSORPTION [J].

ANGRESS, JF ;

GOODWIN, AR ;

SMITH, SD .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1965, 287 (1408) :64-&

[2] SINGLE PHONON ABSORPTION BANDS IN FAST NEUTRON IRRADIATED SILICON [J].

BALKANSKI, M ;

NAZAREWICZ, W .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUN) :573-&

[3] THEORY OF OPTICAL ABSORPTION BY VIBRATIONS OF DEFECTS IN SILICON [J].

DAWBER, PG ;

ELLIOTT, RJ .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (521) :453-&

[4]

Dolling G., 1963, INELASTIC SCATTERING, VII, P37

[5] VIBRATIONAL ABSORPTION OF CARBON IN SILICON [J].

NEWMAN, RC ;

WILLIS, JB .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (02) :373-&

[6] PHONON EMISSION AND SELF-ENERGY EFFECTS IN NORMAL-METAL TUNNELING [J].

ROWELL, JM ;

MCMILLAN, WL ;

FELDMANN, WL .

PHYSICAL REVIEW, 1969, 180 (03) :658-&

[7] ELECTRON LOCAL-MODE PHONON INTERACTION IN METAL-INSULATOR-SEMICONDUCTOR TUNNEL JUNCTIONS [J].

SCHEIN, LB ;

COMPTON, WD .

APPLIED PHYSICS LETTERS, 1970, 17 (06) :236-&

[8] DOPANT DEPENDENCY OF FERMI LEVEL LOCATION IN HEAVILY DOPED SILICON [J].

TAO, TF ;

HSIA, Y .

APPLIED PHYSICS LETTERS, 1968, 13 (09) :291-+

[9] LOW LEVEL SECOND HARMONIC DETECTION SYSTEM [J].

THOMAS, DE ;

ROWELL, JM .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (09) :1301-&

[10] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].

TRUMBORE, FA .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :205-233

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