ELECTRON-SCATTERING BY IONIZED IMPURITIES IN SEMICONDUCTORS

被引：472

作者：

CHATTOPADHYAY, D

QUEISSER, HJ

机构：

来源：

REVIEWS OF MODERN PHYSICS | 1981年 / 53卷 / 04期

关键词：

D O I：

10.1103/RevModPhys.53.745

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：745 / 768

页数：24

共 174 条

[61]

EMELYANENKO OV, 1976, SOV PHYS SEMICOND+, V10, P759

[62] MOBILITY OF ELECTRONS IN COMPENSATED SEMICONDUCTORS .2. THEORY [J].

FALICOV, LM ;

CUEVAS, M .

PHYSICAL REVIEW, 1967, 164 (03) :1025-&

[63] SCATTERING OF FREE CARRIERS DUE TO STRAIN FIELD OF SCREW DISLOCATIONS IN SEMICONDUCTORS [J].

FARVACQUE, JL ;

GERLACH, E .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 77 (02) :651-656

[64]

Ferziger J. H., 1972, MATH THEORY TRANSPOR

[65] INFLUENCE OF IMPURITIES AND CRYSTALLINE DEFECTS ON ELECTRON-MOBILITY IN HEAVILY DOPED SILICON [J].

FINETTI, M ;

GALLONI, R ;

MAZZONE, AM .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1381-1385

[66]

Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[67] ELECTRONIC STRUCTURE OF PRIMARY SOLID SOLUTIONS IN METALS [J].

FRIEDEL, J .

ADVANCES IN PHYSICS, 1954, 3 (12) :446-507

[68]

Friedel J., 1958, NUOVO CIM, V7, P287, DOI DOI 10.1007/BF02751483

[69] IMPURITY CONDUCTION IN TRANSMUTATION-DOPED P-TYPE GERMANIUM [J].

FRITZSCHE, H ;

CUEVAS, M .

PHYSICAL REVIEW, 1960, 119 (04) :1238-1245

[70]

FRITZSCHE H, 1962, P INTERNATIONAL C PH, P29

← 2 3 4 5 6 7 8 9 10 11 →